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离子轰击产生湍层氮化硼

Turbostractic Boron Nitride Produced by Ion Bombardment
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摘要 用高分辨率透射电子显微镜检查了N+2离子轰击后的氮化硼样品.发现在片状六方形氮化硼sp2层的弯折区,有0.35mm晶面间距的湍层氮化硼形成.虽然其形成机制尚不清楚,但是基于束流-固体相互作用观点的讨论可能是了解湍层氮化硼结构生长过程的关键所在. Fine structures appearing in boron nitride(BN) sample bomparded by N+2 ion (60keV) were examined by JEM-200cx high-resolution transmission electron microscopy (HRTEM) at 200kV accelerating voltage. In the curved region of plate-like h-BN crystal sp2 sheets (spacing 0. 33nm), it was observed that the t-BN structure with an average interplaner spacing of 0. 35 nm was formed. Although the mechanism of formation of the t-BN structure is nuclear, it appears that our discussion based on the viewpoint of beam-solid interaction may be critical in understanding the growth process of the t-BN structures.
出处 《高能物理与核物理》 EI CSCD 北大核心 2000年第11期1055-1059,共5页 High Energy Physics and Nuclear Physics
基金 国家自然科学重点基金!(19735004) 中国科学院基础性研究重点基金!(952-J1-414) 中国科学院上海硅酸盐研究所
关键词 湍层氮化棚 离子轰击 透射电子显微镜 纳米材料 turbostractic boron nitride, ion bombardment, transmission electron microscopy
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参考文献1

  • 1Horiuchi S,Appl Phys,1995年,34卷,L1612页

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