摘要
To modulate the tunneling gap with the lock in amplifier in the scanning tunneling microscopy(STM), information of the tunneling current variation can be obtained. The local potential barrier distribution of graphite surface atoms is got by means of such technology. Compared with STM image under topography observation mode, the local potential barrier image has higher resolution and less influence on the tip and better anti interference capability. Observed results of the graphite are given and discussed in this paper.
To modulate the tunneling gap with the lock in amplifier in the scanning tunneling microscopy(STM), information of the tunneling current variation can be obtained. The local potential barrier distribution of graphite surface atoms is got by means of such technology. Compared with STM image under topography observation mode, the local potential barrier image has higher resolution and less influence on the tip and better anti interference capability. Observed results of the graphite are given and discussed in this paper.
出处
《原子与分子物理学报》
CAS
CSCD
北大核心
2000年第4期603-607,共5页
Journal of Atomic and Molecular Physics
关键词
STM
局部势垒分布
石墨原子表面
Scanning tunneling microscopy(STM)
Local potential barrier
Lock in amplifier