摘要
使用具有不同有效质量的一维多阶梯势透射系数的递推计算公式 ,可以方便地计算任意形状的一维分区位势的透射系数。给出了几种位势的透射系数随入射粒子能量变化的曲线 ,研究了谐振隧穿现象。对半导体材料GaAlAs/GaAs/GaAlAs的谐振隧穿现象进行了较详细的讨论。计算结果表明 ,对于两对称方势垒夹一个任意形状势阱的位势 。
The transmission coefficient for one dimensional potential with arbitrary shape is calculated using the recurrence formulae of one dimensional multi stepped potentials. Resonance tunneling phenomena are studied with the curves of transmission coefficients varying with the energy of incident particles. In particular, the resonance tunneling phenomena in the semiconductor material GaAlAs/GaAs/GaAlAs are discussed in detail. The calculated results show that the resonance tunneling phenomenon for the potential, which has an arbitrary shape well between double symmetric square barriers could also exist.
出处
《计算物理》
CSCD
北大核心
2000年第6期649-654,共6页
Chinese Journal of Computational Physics
基金
国家自然科学基金资助项目
关键词
一维位势
透射系数
谐振隧穿现象
量子物理
one-dimensional potential
transmission coefficient
resonance tunneling
