不同剂量C离子注入Si单晶中Si_(1-x)C_x合金的形成及其特征

THE FORMATION AND CHARACTERISTICS OF Si_(1-x)C_x ALLOYS IN Si CRYSTALS BY MEANS OF IMPLANTATION OF CIONS WITH DIFFERENT DOSES

室温下在单晶Si中注入 (0 6— 1 5 ) %的C原子 ,利用高温退火固相外延了Si1-xCx 合金 ,研究了不同注入剂量下Si1-xCx 合金的形成及其特征 .如果注入C原子的浓度小于 0 6 % ,在 85 0— 95 0℃退火过程中 ,C原子容易与注入产生的损伤缺陷结合 ,难于形成Si1-xCx 合金相 .随注入C原子含量的增加 ,C原子几乎全部进入晶格位置形成Si1-xCx 合金 ,但如果注入C原子的浓度达到 1 5 % ,只有部分C原子参与形成Si1-xCx 合金 .升高退火温度 ,Si1-xCx 合金相基本消失 .

Carbon ions with concentration of (0 6—1 5)% were implanted into silicon crystals at room temperature and Si 1-x C x alloys were grown by solid phase epitaxy with high temperature annealing. The formation and characteristics of Si 1-x C x alloys under different implanted carbon doses were studied. If the implanted carbon atom concentration was less than 0 6%, carbon atoms would tend to combine with the defects produced during implantation and it was difficult for Si 1-x C x alloys to form during annealing at 850—950?℃. With the increase of implanted C concentration, almost all implanted carbon atoms would occupy substitution positions to form Si 1-x C x alloys, but only part of implanted carbon atoms would occupy the substitution position to form Si 1-x C x alloys as the implanted dose increased to 1 5%. Most Si 1-x C x alloy phases would vanish as the annealing temperature was increased higher.