镶嵌在SiO_2薄膜中InAs纳米颗粒的Raman散射

RAMAN SCATTERING FROM InAs NANOCRYSTALS EMBEDDED IN SiO_2 THIN FILMS

对镶嵌在SiO2 薄膜中纳米InAs颗粒的Raman散射谱进行了研究 .与大块InAs晶体相比 ,InAs纳米颗粒的Raman散射谱具有相似的特征 ,即由纵光学声子模和横光学声子模组成 ,但是散射峰宽化并红移 .用声子限域效应解释了散射峰的红移现象 ,并结合InAs纳米颗粒的应力效应解释了红移量与理论值的差异 .

Raman scattering from InAs nanocrystals embedded in SiO 2 thin films has been measured and studied. Raman spectra of InAs nanocrystals have a similar feature with that of bulk InAs crystal. Broadened and red\|shifted Raman scattering peaks were observed from the nanocrystals; this has been attributed to the phonon confinement effect. A compressive stress in the interface between InAs nanocrystals and the SiO 2 matrix was also taken into account to interpret the red shift.