电子碰撞引起的铜元素K壳层电离截面的测量与修正

Measurement and Correction of K-Shell Ionization Cross Sections of Copper Element by Electron Impact

在电子碰撞的情形下 ,通过对铜靶的特征 X射线测量 ,从而推算出它的 K壳层电离截面。在实验中采用了薄靶厚衬底新方法。通过电子输运计算 ,由厚衬底产生的反射电子对计数的影响得以修正。用蒙特卡罗技术对质量厚度为 2 3 μg/cm2的铜靶的多次散射影响作了修正。

Through measuring the characteris tic X-ray for copper target of mass thickness 23μg/cm-2, its K-shell ioniza tion cross section was calculated. The method of thin target with thick substrat e was used in the experiment. The influence of the electrons reflected from the substrate was corrected by means of a electron transport calculation. The multip le scattering effect for the copper target of mass thickness 23μg/cm-2 is cor rected by the EGS4 program of Monte-Carlo techniques. This method is reported for first time.