GaAs中Be受主的光热电离光谱研究

PHOTOTHERMAL IONIZATION SPECTROSCOPY OF BE ACCEPTOR IN GaAs

应用光热电离光谱方法研究了 MBE生长 Ga As薄膜中 Be受主的杂质能级 .通过与理论计算的比较 ,将观测到的 3个跃迁峰归属于 G线、C线和 D线跃迁 ,同时在实验上也观察到 Be受主 1s3/ 2 (Γ+ 8)态到 2 p1 / 2 (Γ- 6 )态跃迁 ,由实验结果算得 Be受主的电离能为 2 8.6 me V.

The photothermal ionization spectroscopy (PTIS) was employed to study Be shallow acceptor states in MBE grown GaAs films. The G line, C line and D line transitions were observed and attributed to the ones from the ground state 1s 3/2 (Γ + 8) of Be acceptor to the first three excited odd parity states 2p 3/2 (Γ - 8), 2p 5/2 (Γ - 8) and 2p 5/2 (Γ - 7), respectively throngh comparison with theoretical calculation. The transition from the ground state 1s 3/2 (Γ + 8) to the excited state 2p 1/2 (Γ - 6) was also observed. According to the PTIS, the binding energy of Be acceptor in GaAs was deduced to be 28.6meV.