摘要
将硅雪崩光电二极管应用于盖革模式下 ,制作出高量子效率、低噪音、短死时间的单光子探测器 .设计并制作了雪崩抑制电路 ,获得探测器特性参量为无源抑制方式下死时间1 μs,有源抑制下 60～ 80 ns,输出脉冲宽度 1 5～ 2 0 ns.并详细检测了探测器直到液氮温度下的特性 .
Silicon avalanche photodiodes operating in the Geiger mode are capable of detecting single photon in the near infrared regime.It is designed and tested two types of quenching circuit,with a dead time of about 1μs in the passive quenching mode and 60～80ns in the active quenching mode.The output pulse width is about 20ns.The performance of the detector under various operating temperatures has been investigated down to liquid nitrogen temperatures,and a new observation is reported.
出处
《光子学报》
EI
CAS
CSCD
2000年第12期1142-1147,共6页
Acta Photonica Sinica
基金
国家自然科学基金
中国科学院计量测试高技术联合实验室资助项目
关键词
雪崩光电二极管
单光子探测器
APD
Avalanche photodiode
Quenching
Geiger mode
Single photon detectioP
