溅射功率对ZnO：Si透明导电薄膜性能的影响

Effect of Sputtering Power on the Properties of Transparent Conductive Silicon Doped ZnO Thin Films

采用直流磁控溅射法在室温玻璃基片上制备出了掺硅氧化锌（ZnO：Si）透明导电薄膜，研究了溅射功率对ZnO：Si薄膜结构、形貌、光学及电学性能的影响，实验结果表明，溅射功率对ZnO：Si薄膜的生长速率、结晶质量及电学性能有很大影响，而对其光学性能影响不大。实验制备的ZnO：LSi薄膜为六方纤锌矿结构的多晶薄膜，且具有垂直于基片方向的c轴择优取向。当溅射功率从45W增加到105W时，薄膜的晶化程度提高、晶粒尺寸增大，薄膜的电阻率减小；当溅射功率为105W时，薄膜的电阻率达到最小值3．83~104n·cm，其可见光透过率为94．41％。实验制备的ZnO：Si薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。

Transparent conducting silicon doped zinc oxide thin films was successfully fabricated on glass substrates at room temperature by direct current magnetron sputtering. The effects of sputtering powers on structural, morphological, optical and electrical properties of SZO thin films were investigated . Experimental results showed that sputtering powers had a significant impact on the growth rate,crystal quality and electrical properties of ZnO： Si thin films,but have little impact on its optical properties. The prepared thin films possessed polycrystalline hexagonal wurtzite structure with preferred orientation of （0 0 2） along the c-axis perpendicular to the substrate. When the sputtering power increased from 45 W to 105 W,the degree of crystallization of the films and the grain size increased the film resistivity decreased.When the sputtering pressure,deposition time and target substrate distance were 5.0 Pa, 20 minutes and 60 mm respectively and unchanged,the minimum resistivity of 3.83x 10-4 ~ cm （sheet resistance 6.7 for thickness 571.3 nm） was achieved at the direct current sputtering power 105 W and optical transmission is 94.41%. The ZnO： Si thin films prepared could be used as the transparent electrode of the thin film solar cells or liquid crystal displays.