摘要
采用真空上引的固-液复合法制备块体铜/铝复合材料,借助扫描电镜、四探针法对铜/铝复合界面的组织结构及导电性能进行研究。结果表明:通过不同的工艺参数优化,最终得到在铜板预热温度200℃,铝液温度700℃时,可获得界面过渡层厚度为9.46μm,界面电阻率为2.16×10-5Ω·mm的良好块体铜/铝复合材料。
Cu/A1 compound materials were fabricated by solid-liquid bonding method of vacuum up-drawing. Cu/A1 composite interface structure and conductivity performance were tested by SEM and four-point probe method. The results show that by different technological parameters optimization. The well-bonded interface with a transition layer of about 9.46 μm in thickness and international resistance rate of 2.16×10-5Ω·mm can be obtained as the Cu plate pre-treated at 200 ℃ and AI nourin, temt）erature of 700 ℃.
出处
《热加工工艺》
CSCD
北大核心
2013年第22期35-37,共3页
Hot Working Technology
基金
国家自然科学基金项目(51074082
51264025
51201080)
国家科技部"863计划"项目(2009AA03Z512)
云南省应用基础研究项目(KKSY201251086)
云南省教育厅科学研究基金项目(2012J089)
关键词
真空上引法
铜
铝复合材料
界面
电阻率
vacuum up-drawing method
Cu/A1 compound material
interface
conductivity
