溅射功率对ZnO薄膜的影响

Influence of the Sputtering Power on ZnO Thin Films

采用射频磁控溅射在Si（100）衬底上制备不同溅射功率下的ZnO薄膜。利用X射线衍射（XRD）、扫描电镜（SEM）、台阶仪和光致发光（PL）谱等表征技术研究了溅射功率对Zn0薄膜的表面形貌、晶粒尺寸、薄膜厚度及光学特性的影响。XRD及SEM的研究结果表明，在溅射功率为50-80W时，随着溅射功率的增大，晶粒尺寸增大，在70W时晶粒尺寸达到最大。随着功率的进一步增加，晶粒尺寸减小，缺陷增加。台阶仪的研究结果表明，随着溅射功率的增加，薄膜的厚度也随之增加，这可能是起辉面积对溅射速率有所影响。PL谱的研究表明，制备样品均出现绿色发光峰，其强弱反应薄膜的结晶质量，发光峰的强度越弱，说明薄膜的缺陷越少，结晶质量越好。

The ZnO thin films were sputtered on Si （100） substrates by the method of RF magnetron sputtering under different sputtering powers. The effects of the sputtering power on the sur- face morphology, grain size, film thickness and optical properties of the ZnO thin films were re- searched using the X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic-profiler, photoluminescenee （PL） spectra and other characterization techniques. The results of the XRD and SEM show that the grain size increases as the increment of the sputtering power within the range of 50- 80 W, and the grain obtains the maximum size at 70 W. But when the power increases further, the grain size decreases and the defect increases. The atomic-profiler results indicate that the film thickness increases as the increase of the sputtering power due to the effect of the luminance area on the sputtering rate. The PL results show that the green emission peak is found in all the prepared films, the strength of the green emission peak reflects the crystal quality, the weaker the strength of the emission peak is, then the less the defect in the film is, and the better the crystal quality is.