硅抛光片表面时间依赖性雾产生的原因分析

Analysis of the Causes of the Time-Dependent Haze on the Polished Silicon Wafer Surface

阐述了硅片表面时间依赖性雾(TDH)的形成过程、颗粒分布、形态以及检测方法。时间依赖性雾产生的原因包括清洗后化学液体的残留、清洗后硅片的干燥程度、片盒的洁净度和干燥度、表面金属以及硅片存放的环境(洁净度、温湿度和化学气氛)等。给出了不同的因素诱发时间依赖性雾的机理、颗粒分布、形态及消除方法。时间依赖性雾都可以用SC1湿法清洗掉。有些有时间依赖性雾的硅片用SC1洗掉后不会再产生,但对Cu引起的时间依赖性雾,硅片用SC1洗掉后,存放一段时间还会产生时间依赖性雾。

The formative process, particle distribution, shape and identification method of the time-dependant-haze （TDH） on the surfaces of silicon wafers were described. The factors to pro- duce the time-dependent-haze include the chemical liquid residue after cleaning, degree of drying for the silicon wafers after cleaning, cleanliness and dryness of the cassettes, surface metals and storage environment of the silicon wafers, such as the cleanliness, temperature, humidity and chemical atmosphere, etc. The mechanism, particle distribution, shape and elimination methods for the time-dependent-haze because of different induced factors were presented. The time-dependent-haze can be washed off by SC1. The time-dependant-haze on the surface of silicon wafers washed off by SC1 will no longer produce, while the time-dependant-haze induced by Cu still occurs for a period of storage time.