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多孔硅的形貌、制备和应用 被引量：2

Morphology,Preparation and Application of Porous Silicon
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摘要 介绍了近年来制备多孔硅的主要方法,以及多孔硅在光电传感器、发光器件、电池、生物技术等新领域的应用。 This review summarizes major preparations of porous silicon in recent years and the applications of porous silicon in photoelectric sensors, Right-emitting device, battery, biotechnology, etc.
作者 赵景勇 闫康平
机构地区 四川大学化工学院
出处 《有机硅材料》 CAS 2013年第6期462-466,共5页 Silicone Material
关键词 多孔硅 制备 传感器 发光器件 电池 porous silicon, preparation, sensor, luminescent device, battery
分类号 O613.72 [理学—无机化学]
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参考文献19

  • 1CANHAM L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J]. Appl Phy Lett., 1990. 57 (10) : 1046 - 1408.
  • 2汪婷,黎学明,李武林,文军.近规整多孔硅电化学制备与表征[J].功能材料,2011,42(5):869-871. 被引量：2
  • 3WIND R A, MURTAGH M J, MEI F. Fabrication of nanoperiodic surface structures by controlled etching of dislocations bicrystals [ J]. Appl Phy Lett. , 2001, 78 (15): 2205 -2207.
  • 4CHEN Q W, ZHU J S, LI X G, et al. Photolumines- cence in porous silicon obtained by hydrorthermal etch ing IJ3. ApplPhyLett, 1996, 220 (4): 293-296.
  • 5宋晓岚,杨海平,史训达,何希,邱冠周.硅材料及其电化学研究进展[J].材料导报,2006,20(2):21-25. 被引量：7
  • 6HUMMEL R E, CHANG S S. Novel technique for pre- paring porous silicon [J]. Appl Phy Lett, 1992, 61 (16): 1965 -1967.
  • 7金长春,王惟彪,杨松林,王永珍,姜锦秀,具昌南.制备多孔硅的一种新方法[J].发光学报,1993,14(1):105-106. 被引量：2
  • 8杨光,何金田,李新建,梁二军.多孔硅气体传感器[J].传感器技术,2004,23(9):7-9. 被引量：4
  • 9SEALSL, GOLEAJL, TSELA, etal. Rapid, re- versible, sensitive porous silicon gas sensor [ J ]. J Appl Phys, 2002, 91 (4): 2519-2523.
  • 10黎学明,杨建春,陈伟民,黄尚廉,李虎.基于多孔硅光激荧光淬灭效应的SO_2传感器[J].光电子．激光,2001,12(10):992-995. 被引量：6

二级参考文献85

  • 1朱敏,王定一.电力系统中梯级水电站的日优化运行研究[J].华中理工大学学报,1997,25(1):47-50. 被引量：8
  • 2Shimura F. Semiconductor silicon crystal technology. San Diego, Academic Press, 1990.
  • 3Hesketh P J, Gowda C J S, Zanoria E. J Electrochem Soc,1993, 140:1080.
  • 4Dove P M, Rimstidt J D. Silicon-water interactions. In. Silic-Physical Behaviour, Geochemistry and Materials Applications. Heaney P J, Prewitt C T,Gibbs G V (eds.). Review in Mineralogy, Mineralogical Society of America, Washington D C, 1994, 29:258.
  • 5Filho S G S, Hasenack L C, Salay L C. J Electrochem Soc,1995, 142:195.
  • 6Ljungberg K U J, Bengtsson S, Doderbag A, J Electrochem Soc, 1996, 143:1709.
  • 7Watanabe S, Shigeno M, Nakayama N. Jpn J Appl Phys,1991, 29: 3575.
  • 8Bertagna V, Plougonven C, Rouelle F. J Electroehem Soc,1995, 142:3532.
  • 9Chen L C,Chen M,Lien C. J Eledtrochem Soe,1995,142,170.
  • 10Turner D R. J Electrochem Soc, 1958, 105:402.

共引文献27

同被引文献30

  • 1NAGARKAR V V, GUPTA T K, MILLER S, et al. Structured CsI(Tl) scintillators for X-ray imaging applications [J]. IEEE Trans Nucl Sci, 1998, 45(2): 492-496.
  • 2KIMA B J, CHOA G, CHA B K, et al. An X-ray imaging detector based on pixel structured scintillator [J]. Radiat Meas, "2007, 42(8): 1415-1418.
  • 3KLEIMANN P, LINNROS J, PETERSSON S. Formation of wide and deep pores in silicon by electrochemical etching [J]. Mater Sci Eng B, 2000(69/70): 29-33.
  • 4BADEL X, GALECKAS A, LINNROS J, et al. Improvement of an X-ray imaging detector based on a scintillating guides screen [J]. Nucl Instrum Meth A, 2002, 487(1/2): 129-135.
  • 5BADEL X, LINNROS J, KLEIMANN P, et al. Metallized and oxidized silicon macropore arrays filled with a scintillator for CCD-based X-ray imaging detectors [J]. IEEE Trans Nucl Sci, 2004, 51(3): 1001-1005.
  • 6BADEL X, NORLIN B, KLEIMANN P, et al. Performance of scintillating waveguides for CCD-based X-ray detectors [J]. IEEE Trans Nucl Sci, 2006, 53(1): 3-8.
  • 7CHEN C C, CHANG S F, LUO Z P. Anodic-aluminum-oxide template assisted fabrication of cesium iodide (Csl) scintillator nanowires [J]. Mater Left, 2013, 112:190-193.
  • 8CHEN C Y, C/tEN S H, CHEN C C, et al. Using positive pressure to produce a sub-micron single-crystal column of cesium iodide (CsI) for scintillator formation [J]. Mater Lett, 2015, 148: 138-141.
  • 9OHASHI Y, YASUI N, YOKOTA Y. Submicron-diameter phase- separated scintillator fibers for high-resolution X-ray imaging [J]. Appl Phys Lctt, 2013, 102(5): 051907-1-051907-4.
  • 10UHLLIR A JR. Electrolytic shaping of germanium and silicon [J]. Bell Tech, 1956, 35(2): 333-347.

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有机硅材料
2013年 第6期

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