摘要
采用氮化硅(Si3N4)、氮化硼(BN)等原料,通过气氛压力烧结工艺(GPS)研制出了高强度低介电Si3N4基复合陶瓷材料。研究了Si3N4加入量对复合材料力学和介电性能的影响,分析了该材料的显微结构特点。实验结果表明:通过加入27%Si3N4制备的氮化硅基复合材料,其室温抗弯强度(σRT)为366MPa,介电常数(ε)为5.2,介电损耗(tanδ)为9×10-3。
A high--performance low--dielectric Si3 N4 ceramic composites was prepared with Silicon nitride （Si3N4）, boron nitride （BN） etc, by the gas pressure sintering （GPS）. Studied the effect of Si3N4 content on the Si3N4 ceramic composites mechanical , dielectric properties and the material microstrueture features. The experimental results showed that： the Nitride ceramic composite prepared by adding 27% Si3N4 ,the bending strength of the Nitride ceramic composite at room temperature （aRT） is 366MPa and the dielectric constant （ε） is 5.2 and dielectric loss （tanδ） is 9 × 10^-3.
出处
《现代技术陶瓷》
CAS
2013年第5期3-6,共4页
Advanced Ceramics
关键词
高强度
低介电常数
SI3N4陶瓷
high bending strength
low dielectric constant
Si3 N4 ceramic
