摘要
使用微细加工和磁控溅射技术将Al/MoO x纳米复合薄膜集成于半导体桥(SCB),制成含能半导体桥SCB-Al/MoO x以提高SCB的点火能力。薄膜的SEM、DCS和XPS结果表明,复合薄膜成膜质量好,层状结构清晰,放热量可达3200 J/g,达到理论值的68%(理论放热量为4703 J/g),MoO x薄膜含有32%的MoO3、37%的Mo2O5以及31%的MoO2。电容激励发火实验表明:相同激发条件下,SCB-Al/MoO x反应终止时间较SCB显著缩短,能量输出效率高于SCB,发火时溅射出的火花量明显增多,持续时间显著延长,使用原子发射双谱线测温法得到的等离子体温度亦高于SCB。
An energetic semiconductor bridge, SCB-Al/MoOx, was made using Al/MoOx nano multilayer films integrated with semiconductor bridge （SCB） by micro machining technology and magnetron sputtering technology, and accordingly its ignition capacity was enhanced. The Al/MoOx films were identified by SEM, DSC and XPS. Results show that distinct Al/MoOx multilayer films are formed by means of sputter deposited on a layered geometry. The heat generation could reach to 3200 J/g, which is 68% of the theoretical value （4703 J/g）. MoOx films contain MoO3 （32%）, Mo205 （37%） and MoO2 （31% ）, respectively. In capacitance triggered firing experiments, the terminal time of SCB-Al/MoOx reaction is shorter, while the energy output efficiency is higher than those of SCB. Moreover, sparks in the fire increase obviously, and their duration time is extended. The exothermic reactions in Al/MoOx films sustain SCB to generate plasma of higher temperatures.
出处
《爆破器材》
CAS
北大核心
2013年第6期1-6,共6页
Explosive Materials
基金
国家自然科学基金资助项目(51201091)
