摘要
通过概述双向可控硅的换向机理,分析提高换向能力的几种技术,运用质量统计软件MINITAB的试验设计分析法(DOE)对双向可控硅芯片的版图设计方案进行归纳总结,确定五试验因子和二个试验水平表,进而确定试验计划.通过对16次工艺试验的结果分析,优选出较佳版图设计方案并获得连续变量因子的回归方程.优选结果表明:在确定芯片工艺方案的前提下,短路区采用正方形分布,并组合相应的换向隔离带设计可更好地实现产品的设计指标.
Through summarizing the commutating theory of TRIACS (triode alternating current switch ),several methods to improve the commutating capability are analyzed, and the layout design of TRIACS chip is sum- marzed through design of experiment (DOE) using the MINITAB , five experiment factors and two level ta- bles are identified,and then the plan is determined. By analyzing 16 times process test resuhs,it selected the better layout design scheme and obtained the continuous variable regression equation. The result of optimiza- tion shows that under the premise of TRIACS chip process is determined, and the emitter shorts are scat- tered in the form of square and grouped in the form of commutation isolation belts,which can achieve the de- sign index of the TRIACS better.
出处
《淮北师范大学学报(自然科学版)》
CAS
2013年第4期34-38,共5页
Journal of Huaibei Normal University:Natural Sciences
基金
国家自然科学基金项目(41275027)
安徽高校省级自然科学研究项目(KJ2013Z228)