一种用于横向高压器件的曲率结扩展技术

A Novel Curved Junction Extension Technology for Lateral High-voltage Device

提出一种用于横向高压器件的曲率结扩展技术,并在横向双扩散MOSFET(LDMOS)上进行了实验验证。该技术采用一个轻掺杂的p-sub层,插入LDMOS的曲率结区域,从而将高掺杂的小曲率半径p-body/n-drift突变结调整为低掺杂的大曲率半径p-sub/n-drift结,降低了p-body/n-drift突变结的电场峰值,避免了在该处发生提前的雪崩击穿。该技术已成功应用于超结LDMOS,实验结果显示,应用了该技术的超结器件击穿电压达800 V。

A novel curved junction extension technology for lateral high-voltage device is proposed and experimentally demonstrated.A low-doped p-sub,which is inserted in the curved region of the lateral diffused MOSFET（LDMOS）, adjusts the high-doped abrupt p-body/n-drift junction with small curvature radius to low-doped p-sub/n-drift junction with large curvature radius,thus reducing peak electric field and avoiding premature avalanche breakdown at the curved abrupt p-body/n-drift junction.The proposed technology has been applied into a super junction LDMOS.The experimental result indicates that the super junction LDMOS with the proposed technology exhibits off-state breakdown voltage of 800 V.