真空共蒸发法沉积的ZnTe:Cu薄膜

ZnTe:Cu Films Deposited by Vacuum Co-evaporation

用真空共蒸发法沉积了ZnTe和ZnTe：Cu多晶薄膜，研究了Cu含量对薄膜结构和电学性能的影响．发现刚沉积的ZnTe薄膜和轻掺杂的ZnTe:Cu薄膜的结构均为高度（111）择优取向的立方相．掺杂浓度较高的ZnTe：Cu薄膜除了立方相外，还存在六方相．重掺杂薄膜中（111）择优取向消失．在ZnTe：Cu薄膜中观察到反常的暗电导温度关系曲线．薄膜的光学能隙在2.15～2.21eV之间．用结构相变的观点对实验现象作了解释．

Polycrystalline ZnTe and ZnTe:Cu films were deposited by varuum co-vaporizationtechnology. The Structure and the electric properties of the films were studied as function of copperconcentaion. It is found that the film structure of newly-deposited ZnTe and ligh doped ZnTe:Cu arecubic phase, of high preferential orientation of (111). There is hexagonal phase for ZnTe:Cu films ofhigher copper concentuation besides cubic phase. The preferential -orientation of (111) disappears forheavily doped ZnTe:Cu films. The abnormal temperature dependence of dark conductivity was observedfor heavily doped films. All films have optical energy gap of 2.15-2.21eV. The explanation was madebased on the structure transition .