晶体管的盐雾试验

Salt Spray Test of Transistor

为了评价晶体管在海洋环境中的耐腐蚀性能,对3DK4C和3DK105B两种晶体管开展了两个盐雾试验的分析和研究。试验Ⅰ从外观腐蚀情况和电学参数退化两个方面对比分析了两种晶体管的耐腐蚀性,并分析了电学参数退化机理,试验结果表明相对于电参数,管壳与外引线受到盐雾的影响最显著,提高镀层的耐蚀特性是提高晶体管可靠性的关键;盐雾试验Ⅱ提出一种全新的涂层破坏方法,通过四组不同盐浓度恒定应力的加速腐蚀试验,给出了3DK105B晶体管表面涂层的腐蚀速率与盐浓度的关系,分析了盐雾腐蚀机理。试验结果可为国产晶体管的抗腐蚀性能评估提供一定的参考。

The salt spray tests on 3DK4C and 3DK105B transistors were analyzed and studied, in order to evaluate anticorrosion performance of home-made transistor in the marine environment. In the test Ⅰ1, the anti-spray-sah rusty ability of both series transistors was analyzed by comparing their corrosion appearance and degradation of electrical parameters, and the degradation mechanism of the test samples＇ performance parameters was analyed. The test result shows that the impact of the salt spray environment on transistor＇ s envelope and outer lead is more serious than that of parameter degradation. Improving the corrosion resistance properties of the coating is the key to develop the reliability of the transistor. In the test Ⅱ, a new method of the coating damage of the transistor was proposed. By four salt spray tests with different salt concentrations as stress factor, the relationship between corrosion rate of 3DK105B transistors and salt concentration was provided, and the corrosion principle of the salt spray test was analyzed. The results of spray salt test can be used as a reference for the assessment of corrosion resistance of domestic transistor.