氮掺杂Sb2Te3相变材料的脉冲激光沉积法制备与性能研究

The fabrication and properties of N-doped Sb_2Te_3 phase-change materials prepared by pulsed laser deposition

Sb2Te3（ST）薄膜虽然具有高结晶速度和低结晶温度（～132℃）等优点，但由于复位电压过高，无法直接用于制备相变存储器件。文章作者尝试使用脉冲激光沉积法（PLD）制备了氮掺杂的Sb2Te3薄膜。用原子力显微镜（AFM）对此薄膜进行测试的结果表明，脉冲激光沉积法制备的生成态ST薄膜和氮掺杂ST薄膜表面粗糙度分别为0，12nm和0．58nm，表面较为平整。研究表明，PLD法制备的氮掺杂sT薄膜具有更好的组分稳定性，可显著提高薄膜低阻态电阻值，降低复位功耗，氮掺杂量在6at％的ST薄膜的置位电压和复位电压适中，显示出较好的综合性能。

Although Sb2Te3 （ST） has the merits of fast crystallization speed and low crystalli- zation temperature （132~C）, it cannot be directly used in phase change random access memories due to its high reset voltage. In this study, N-doped ST thin films with different nitrogen concentrations were deposited by pulsed laser deposition （PLD）. Atomic force microscopy showed that the surface rough- ness of as-grown and N-doped ST thin films was 0.12 nm and 0.58 nm, respectively. The N-doped films possesed better component stability, with significantly higher resistivity in the low resistance state and so lower reset voltages. The optimum set and reset voltages were obtained for films with a ni- trogen concentration of 6 at%, resulting in lower power consumption and good overall performance.