期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

Electron Raman scattering in a HgS/CdS spherical quantum dot quantum well 被引量：1

Electron Raman scattering in a HgS/CdS spherical quantum dot quantum well
原文传递
导出
摘要 Electron Raman scattering （ERS） is investigated in a spherical HgS/CdS quantum dot quantum well （QDQW）. The differential cross section （DCS） is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. The selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems. Electron Raman scattering （ERS） is investigated in a spherical HgS/CdS quantum dot quantum well （QDQW）. The differential cross section （DCS） is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. The selection rules for the processes are studied. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems.
作者 钟庆湖 赖丽萍
机构地区 School of Physics and Optical Information Sciences
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第12期13-16,共4页 半导体学报（英文版）
基金 Project supported by the Guangdong Provincial Natural Science Foundation(No.S2012010010976)
关键词 Electron Raman scattering quantum dot quantum well differential cross-section selection rule Electron Raman scattering quantum dot quantum well differential cross-section selection rule
分类号 O471.1 [理学—半导体物理]
  • 相关文献

参考文献29

  • 1Quillec M. Material for future InP-based optoelectronics: In- GaAsP versus InGaA1As. Proc SPIE, 1991, 34:1361.
  • 2Lupton J M, Samuel I D W, Burn P L, et al. Exciton confinement in organic dendrimer quantum wells for opto-electronic applica- tions. J Chem Phys, 2002, 116:455.
  • 3Miller D A B. Quantum-well devices for optics in digital systems. Proc SPIE, 1991, 1389:496.
  • 4Mews A, Eychmtiller A, Giersig M, et al. Optical properties of CdS/HgS/CdS quantum dot-quantum well. J Phys Chem, 1994, 98:934.
  • 5Eychmtiller A, Mews A, Weller H. A quantum dot quantum well: CdS/HgS/CdS. Chem Phys Lett, 1993, 208:59.
  • 6Eychmtiller A, Vossmeyer T, Mews A, et al. Transient photo- bleaching in the quantum dot quantum well CdS/HgS/CdS. J Lu- min, 1994, 58:223.
  • 7Zhong Q H, Liu C H. Studies of electronic Raman scattering in CdS/HgS cylindrical quantum dot quantum well structures. Thin Solid Films, 2008, 516:3405.
  • 8Zhang L, Xie H J, Chen C Y. Frohlich electron-phonon interac- tion Hamiltonian in a quantum dot quantum well. Phys Rev B, 2002, 66:205326.
  • 9Zhang X, Xiaong G G, Feng X B. Well width-dependent third- order optical nonlinearities of a ZnS/CdSe cylindrical quantum dot quantum well. Physica E, 2006, 33:120.
  • 10Tkach M, Holovatsky V, Voitsekhivska O, et al. Spectra of quasiparticles and their interaction in complicated spherical nanoheterosystem. Phys Status Solidi B, 1997, 203:373.

同被引文献2

引证文献1

Journal of Semiconductors
2013年 第12期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部