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Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate 被引量：2

Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate
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摘要 In this paper, the enhanced performance of InGaN/GaN multiple quantum well solar cells grown on patterned sapphire substrates （PSS） was demonstrated. The short-circuit current （Jsc） density of the solar cell grown on PSS showed an improvement of 60%, compared to that of solar cells grown on conventional sapphire substrate. The improved performance is primarily due to the reduction of edge dislocations and the increased light absorption path by the scattering from the textured surface of the PSS. It shows that the patterned sapphire technology can effectively alleviate the problem of high-density dislocations and low Jsc caused by thinner absorption layers of the InGaN based solar cell, and it is promising to improve the efficiency of the solar cell. In this paper, the enhanced performance of InGaN/GaN multiple quantum well solar cells grown on patterned sapphire substrates （PSS） was demonstrated. The short-circuit current （Jsc） density of the solar cell grown on PSS showed an improvement of 60%, compared to that of solar cells grown on conventional sapphire substrate. The improved performance is primarily due to the reduction of edge dislocations and the increased light absorption path by the scattering from the textured surface of the PSS. It shows that the patterned sapphire technology can effectively alleviate the problem of high-density dislocations and low Jsc caused by thinner absorption layers of the InGaN based solar cell, and it is promising to improve the efficiency of the solar cell.
作者 井亮 肖红领 王晓亮 王翠梅 邓庆文 李志东 丁杰钦 王占国 侯洵
机构地区 Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics Xi'an Jiaotong University
出处 《Journal of Semiconductors》 EI CAS CSCD 2013年第12期45-48,共4页 半导体学报（英文版）
基金 Project supported by the National Natural Science Foundation of China(Nos.61076052,60906006) the State Key Development Program for Basic Research of China(No.2012CB619303) the National High Technology Research and Development Program of China(No.2011AA050514)
关键词 INGAN pattemed sapphire substrate solar cell InGaN pattemed sapphire substrate solar cell
分类号 TN304.2 [电子电信—物理电子学]
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参考文献19

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同被引文献57

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Journal of Semiconductors
2013年 第12期

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