磷吸杂对多晶硅少子寿命影响的比较研究

THE COMPARATIVE STUDY OF THE EFFECTS OF PHOSPHORUS GETTERING ON PLRYSTALLINE SILICON MINORITY CARRIER LIFETIME

用微波光电导衰减仪(μ-PCD)研究了不同温度和时间的磷吸杂处理对铸造法多晶硅片和冶金法多晶硅片少子寿命的影响。实验发现:冶金法多晶硅片吸杂的效果明显优于铸造法多晶硅片吸杂,特别是在高温吸杂时,冶金法多晶硅片的少子寿命仍保持较高值。磷吸杂温度和吸杂时间对铸造法多晶硅片和冶金法多晶硅片的少子寿命影响规律不一样。

With the microwave photoconductivity decay instrument （ Ix - PCD ）, it is studied at different temperature and time of phosphorus gettering treatments on casting polycrystalline silicon films and metallurgical process of polyerystalline silicon film minority carrier lifetime effeets. It is obviously that Metallurgy polyerystalline silicon wafer gettering effeet better than casting polycrystalline sili- con wafer gettering. Especially in high temperature gettering, metallurgy polycrystalline silicon films minority carrier lifetime, still main- tain higher value. Phosphorus gettering temperature and time on casting polyerystalline silicon films and metallurgical process of poly- crystalline silieon film of minority earlier lifetime influence law of different.