摘要
InP材料被广泛的应用于光电子领域,但其材料脆、工艺不成熟、成本高,而Si基外延InP材料能良好的改善该技术瓶颈。论文中对不同介质、不同厚度的介质键合制备Si/InP材料进行了分析。其中以SiO2键合制备的Si/InP材料应力转化率最高,且SiO2制备工艺简单、亲水,材料键合强度大,机械特性好,是键合制备Si/InP材料的首选。而且,SiO2键合介质越薄,其应力转化率越高,材料对力学信号就越敏感,制备的Si/InP材料的机械性能越好。
The InP material can be widely used in photoelectron field. But there are some problems to be overcome by the Si/InP, such as, the processing technology, crisp and cost. In this paper, the mechanical properties depends on the different medium material has been discuses. Finally, the SiO2 is the best material to be used as the medium material for bonding the Si and InP. The Si/InP material bonding with SiO2 have higher stress conversion rate, bigger range, smaller displacement and simpler process. The bond strength is stronger and mechanical characteristics are better. Meanwhile, The thickness of medium is more thicker, the stress conversion rate is bigger. The mechanical properties is better for force electric coupling effect.
出处
《电子测试》
2013年第11期35-39,共5页
Electronic Test
