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一种基于石墨烯霍尔器件的读出电路设计 被引量:3

A Readout Circuit for Graphene Hall Element
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摘要 为了实现对石墨烯霍尔器件的高精度检测,采用前端放大以及模数转换器技术,设计了一款模拟前端读出电路.该读出电路包括前端放大器、低压差线性稳压器件、施密特触发器以及10bit/1MHz逐次逼近模数转换器四大部分.读出电路芯片采用SMIC 0.18μm 1P6M标准CMOS工艺实现.后仿真结果显示,在电源电压3.3V,输入信号50kHz和1MHz时钟频率下,无杂散动态范围(SFDR)为71.294dB,信噪失真比(SNDR)达到59.538dB,有效精度(ENOB)达到9.59bit,可检测0.000 13T特斯拉的磁场变化,满足石墨烯霍尔器件的检测要求. In order to realize the high resolution detection of grapheme hall element, amplifier and analog-to-digital technique is adopted to design a analog front-end readout circuit. The circuit consists of amplifier, low dropout regulator (LDO), Schmitt trigger and 10 bit/1 MHz Successive Approximation Analog-to-Digital Converter (SAR ADC). The readout is implemented in SMIC 0. 18 μm 1P6M CMOS process. The post-simulation results show that in 3.3 V power supply, 50 kHz input frequency and 1 MHz clock frequency, the SFDR is 71. 294 dB, SNDR is 59. 538 dB, ENOB is 9.59 bit, detection accuracy is 0. 00013 T, meets the detection requirement of grapheme hall element.
出处 《微电子学与计算机》 CSCD 北大核心 2013年第12期137-141,共5页 Microelectronics & Computer
基金 国家科技重大专项(Y1GZ212001)
关键词 石墨烯 霍尔器件 放大器 模数转换器 Graphene Hall element~ amplifier~ analog -to- digital converter
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参考文献6

  • 1Huilong Xu, Zhiyong Zhar^, Runbo Sii, et al. Batch-fabricated high-performance graphene Hall elements [J].Nature Nanotechnol, 2013(1):487-498.
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二级参考文献6

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