摘要
针对传统CMOS带隙电压基准源电路电源电压较高,基准电压输出范围有限等问题,通过增加启动电路,并采用共源共栅结构的PTAT电流产生电路,设计了一种高精度、低温漂、与电源无关的具有稳定电压输出特性的带隙电压源。基于0.5μm高压BiCMOS工艺对电路进行了仿真,结果表明,在-40℃～85℃范围内,该带隙基准电路的温度系数为7ppm/℃,室温下的带隙基准电压为1.215 V。
In view of the traditional CMOS bandgap voltage reference source circuit power voltage is higher and reference voltage output range is limited.By increasing the starting circuit, and using the cascode configuration of PTAT current generating circuit,designed a high precision, low temperature drift, having a stable voltage output characteristic of the band- gap voltage source independent of the power supply.Based on 0.5μm high voltage BiCMOS process for circuit simulation, the results show that ihe band-gap reference circuit in the range of -40℃ ~ 85 ℃ temperature coefficient is 7ppm / ℃, at room temperature, the band-gap reference voltage is 1.215V.
出处
《电子设计工程》
2013年第23期60-62,65,共4页
Electronic Design Engineering
