摘要
In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors （HEMTs） each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance （gm,max） values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage （BVGD） defined at a gate current of-1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency （fT） of 164 GHz and a maximum oscillation frequency （fmax） of 390 GHz are successfully obtained; moreover, the fmax of our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm,max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications.
In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors （HEMTs） each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance （gm,max） values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage （BVGD） defined at a gate current of-1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency （fT） of 164 GHz and a maximum oscillation frequency （fmax） of 390 GHz are successfully obtained; moreover, the fmax of our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm,max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications.
基金
Project supported by the National Basic Research Program of China(Grant Nos.2010CB327502 and 2010CB327505)
the Advance Research Project(Grant No.5130803XXXX)
