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硅基太赫兹集成电路研究进展 被引量:4

Research Advances in Silicon-based Terahertz Integrated Circuits
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摘要 太赫兹波处在亚毫米波与远红外光之间,应用于无线通信具有比微波通信更大的传输带宽和传输速率,在大数据无线通信等方面具有巨大的应用潜力。特征频率逐渐达到太赫兹频段的硅基集成电路工艺,为高集成度低成本太赫兹通讯电路的实现提供了可能。本文综述了近年来硅基太赫兹集成电路的研究进展,论述了硅基太赫兹集成电路设计在有源器件模型、互连结构、电路设计方法等方面面临的挑战,并对硅基太赫兹集成电路的发展趋势进行了讨论。 The terahertz-wave, located between sub-mm-wave and infrared ray, presents a broad application prospects include mass-data wireless communication, while the rapid progress on silicon-based technology provides process foundation for terahertz integrated circuits with small size, high-integration and low cost. An overview was made on the research progress of terahertz integrated circuits based on silicon-based technology, and the challenges and trend of terahertz integrated circuits based on silicon-based technologies also discussed.
出处 《微波学报》 CSCD 北大核心 2013年第5期43-48,共6页 Journal of Microwaves
基金 国家自然科学基金(60671057) 国家重点基础研究发展计划(973)课题(2010CB327403)
关键词 硅基 太赫兹 集成电路 silicon-based, terahertz, integrated circuits
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参考文献39

  • 1洪伟,陈继新,严蘋蘋,汤红军,章丽,候德彬,蒯振起,周健义,朱晓维,周后型,吴柯.CMOS毫米波亚毫米波集成电路研究进展[J].微波学报,2010,26(4):1-6. 被引量:8
  • 2Hu Sanming, Xiong Yong-Zhong, Zhang Bo, Wang Lei,Lim Teck-Guan, Minkyu Je,Mohammad Madihian. ASiGe BiCMOS transmitter/receiver chipset with on-chipSIW antennas for terahertz applicationsf J]. IEEE Journalof Solid-State Circuits, 2012,47 (11) :2654-2664.
  • 3Park Jung-Dong, Kang Shinwon,Niknejad Ali M. AO.38THz fully integrated transceiver utilizing quad- raturepush-push circuitry[ J]. IEEE Symposium on VLSI Cir-cuits, 2011: 22-23.
  • 4Ojefors Erik,Heinemann Bemd,Pfeiffer Ullrich R. Sub-harmonic 220- and 320-GHz SiGe HBT receiver frontends [ J ]. IEEE Transactions on Microwave Theory andTechniques, 2012,60(5):1397-1404.
  • 5Schmalz K,Bomgr ber J,Heinemann B,Rucker H,Scheytt J C. A 245 GHz transmitter in SiGe technology[A]. IEEE Radio Frequency Integrated Circuits Sympo-sium[C]. 2012 :195-198.
  • 6Jung-Dong Park, Shinwon Kang, Siva V Thyagarajan,Elad Alon, Ali M. Niknejad. A 260 GHz fully integratedCMOS transceiver for wireless chip-to-chip communication[A]. IEEE Symposium on VLSI Circuits [ C ] . 2012:48-49.
  • 7Zhao Yan, Erik ojefors, KlausAufi nger, Thomas F.Meister,Ullrich R. Pfeiffer. A 160-GHz subharmonictransmitter and receiver chipset in an SiGe HBT technolo-gy [ J ]. IEEE Transactions on Microwave Theory andTechniques, 2012, 60( 10) : 3286-3299.
  • 8Ullrich R Pfeiffer,Erik ojefors, Zhao Yan. A SiGeQuadrature transmitter and receiver chipset for emerginghigh-frequency applications at 160GHz[ A] . IEEE Inter-national Solid-State Circuits Conference [ C ]. 2010,53 :416-417.
  • 9Ekaterina Laskin, Pascal Chevalier, Alain Chantre, Ber-nard Sautreuil, Sorin P Voinigescu. 165-GHz transceiverin SiGe technology [ J ] ? IEEE Journal of Solid-State Cir-cuits, 2008, 43(5)1087-1100.
  • 10Xu Zhiwei,Gu Qun Jane, Wu Yi-Cheng, Tang Adrian,Lin Yu-Ling, Chen Ho-Hsian, Jou Chewnpu, Mau-Chung, Frank Chang. D-band CMOS transmitter and re-ceiver for multi-giga-bit/sec wireless data link [ A ].IEEE Custom Integrated Circuits Conference ( CICC)[C]. 2010:14.

二级参考文献15

  • 1Seok E, Cao C, Shim D, et al. A 410 GHz CMOS pushpush oscillator with an on-chip patch antenna[ C ]. IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, 2008. 472-473.
  • 2Huang D Q, LaRocca T R, Samoska L, et al. 324GHz CMOS Frequency Generator Using Linear Superposition Technique [ C ]. IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, 2008. 476-629.
  • 3Ojefors E, Pfeiffer U R, Lisauskas A, Roskos H G. A 0. 65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology[J]. IEEE Journal of Solid-State Circuits, 2009, 44(7) : 1968-1976.
  • 4http ://www. itrs. net[ OL], 2008.
  • 5Afshar B, Wang Y, Niknejad A M. A robust 24mW 60 GHz receiver in 90nm standard CMOS[ C]. IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, 2008. 182-183.
  • 6Parsa A, Razavi B. A 60 GHz CMOS receiver using a 30 GHz LO[ C]. IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, 2008. 190-191.
  • 7Jen Y N, Tsai J H, Huang T W, et al. A V-band fully integrated CMOS distributed active transformer power amplifier for IEEE 802.15. TG3c wireless personal area network applications [ C ]. IEEE Compound Semiconductor Integrated Circuits Symposium ( CSIC ), Monterey, 2008. 1-4.
  • 8Martineau B, Knopik V, Siligaris A, et al. A 53-to- 68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS[ C]. IEEE International Solid- State Circuits Conference (ISSCC), San Francisco, 2010. 428-429.
  • 9Munkyo S, Jagannathan B, Carta C, et al. A 1. 1V 150GHz Amplifier with 8dB Gain and +6dBm Saturated Output Power in Standard Digital 65nm CMOS Using Dummy-Prefilled Microstrip Lines [ C ]. IEEE International Solid-State Circuits Conference ( ISSCC ), San Francisco, 2009. 484-485.
  • 10Nicolson S T, Tomkins A, Tang K W, et al. A 1.2V, 140GHz receiver with on-die antenna in 65nm CMOS [ C ]. IEEE Radio Frequency Integrated Circuits Sympo- sium (RFIC), Atlanta, 2008. 229-232.

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