ITO薄膜可见光区增透性能研究

Study on the Antireflection Properties of ITO Thin Film in Visible Region

采用MPS单极性脉冲磁控溅射法,在PMMA衬底上制备SiO2增透薄膜,通过改变溅射时间达到最优的增透效果。在此基础上,制备了不同溅射时间的ITO薄膜,系统研究了增透前后的可见光透过率、方块电阻和红外发射率的变化。实验结果表明,增透后薄膜可见光平均透光率提高大约6%,对于溅射时间小于60 min的ITO薄膜增透之后的平均透光率达到80%以上,同时薄膜的方块电阻以及红外发射率变化较小。

SiO2 antireflection films were prepared on the PMMA substrates by MPS unipolar pulsed magnetron sputtering, and the optimal antireflection effect of SiO2 film was achieved by adjusting the sputtering time. And then the ITO thin films were prepared with the different sputtering time, and the visible light transmittance, the sheet resistance and infrared emissivity of ITO/SiO2 thin films were systematically investigated. The results show that the average visible light transmittance of the antireflection film increases by around 6%, and the average light transmittance of ITO thin film is over 80% for less than 60 min of sputtering time. Furthermore, the sheet resistance and infrared emissivity of the antireflection film change small.