H_2流量对直流磁控溅射制备a-Si∶H薄膜微观结构及光学性能的影响

Effect of H_2 Flow Rates on the Microstructure and Optical Properties of a-Si∶ H Films Prepared by DC Magnetron Sputtering

采用直流磁控溅射法在不同H2流量的条件下制备了a-Si∶H薄膜,研究了H2流量对薄膜微观结构以及光学性能的影响。结果表明:随H2流量的增加,a-Si∶H薄膜的沉积速率有所下降,但其原子排列的有序度上升,并出现了细小的纳米晶粒,使得薄膜的无序结构得到了一定改善。同时,薄膜的光学性能也表现出明显变化,其中透过率持续上升,而光学带隙则呈现出先增大后减小的趋势。最终得到制备a-Si∶H薄膜的最优H2流量为15 sccm。

A series of a-Si： H films with different flow rates of H2 was prepared by the DC magnetron sputtering. The influence of flow rates on the microstructure and the properties of the films was analyzed. The results showed that as the flow rates of Ha increasing, the growing rate of the films decreased while the order degree of partial arrangement of Si atoms increased, which also improved the structure and the nanocrystalline grains appeared in the film. Meanwhile, the optical properties of the films showed significant change, and the visible light transmittance increase, while the optical band gap increased first and then decreased. The best flow rates of H2 to prepare a-Si： H films is 15 sccm.