含磁控和荷控两种忆阻器的混沌电路设计与仿真

Design and simulation of chaotic circuit for flux-controlled memristor and charge-controlled memristor

利用惠普实验室荷控和磁控两种忆阻器模型设计了一个五阶混沌电路.数值仿真结果表明该电路在参数变化情况下能产生Hopf分岔和反倍周期分岔两种分岔行为,并能产生双涡卷、单涡卷、周期态等不同相轨道.为了验证电路的混沌行为,利用基本元器件设计了惠普实验室荷控和磁控忆阻器模拟器,并将其应用到对所设计电路中进行Pspice仿真,电路仿真结果验证了理论分析的正确性.

In this work,we design a fifth-order chaotic circuit with HP memristors, which consists of a flux-controlled memristor and a charge-controlled memristor. By changing the control parameters, the circuit evolves into different orbits, such as periodic orbits, double-scroll, of single-scroll. In order to ensure the occurrence of chaotic behaviors in the circuit, simulators of the charge-controlled memristor and the flux-controlled memristor are designed with conventional electronic devices, and Pspice simulation is conducted on the resulting circuit. Pspice simulation results verify the correctness of the theorectical analysis.