摘要
基于应变Si/SiGe器件结构,本文建立了统一的应变Si NMOSFET漏电流解析模型.该模型采用平滑函数,实现了应变Si NMOSFET漏电流及其导数,从亚阈值区到强反型区以及从线性区到饱和区的平滑性,解决了模型的连续性问题.同时考虑了载流子速度饱和效应和沟道长度调制效应的影响,进一步提高了模型精度.通过将模型的仿真结果和实验结果对比分析,验证了所建模型的有效性.该模型可为应变Si数字集成电路和模拟集成电路分析、设计提供重要参考.
Based on the structure of strained Si/SiGe NMOSFET, a unified drain current model is presented in this paper. The model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a smoothing function, and guarantees the continuities of the drain current and its derivatives.Furthermore, the model accuracy is enhanced by including carrier velocity saturation and channel length modulation effects. Comparisons between the model and the measured data show that the drain current model can describe the device characteristics well. The proposed model is useful for the design and simulation of digital and analogy circuits made of strained Si.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第23期300-307,共8页
Acta Physica Sinica
基金
教育部博士点基金(批准号:JY0300122503)
中央高校基本业务费(批准号:K5051225014
K5051225004)
陕西省自然科学基金(批准号:2010JQ8008)资助的课题~~