SiC单晶线锯切片及电镀锯丝制造技术的研究进展

Research progress of manufacturing technology of SiC single crystal wire saw slicing and electroplated wire saw

针对碳化硅(SiC)单晶硬度高、脆性大,金刚石线锯切片时工具磨损快、切割效率低、晶片表面亚表面易出现微破碎损伤,使SiC单晶高质量切片和高性能锯丝制造技术成为关键和难点的状况,综述了SiC单晶线锯切片及电镀金刚石锯丝制造技术的研究现状,对其中存在的问题进行了概括与分析,并提出了SiC单晶金刚石线锯切片技术的未来研究方向。

It is difficult to machine SiC single crystal slicing by diamond wire saw due to the high hardness and brittleness of SiC single crystal,the high wear speed of machine tool,low machining efficiency and high possibility of fragment and damage on the slicing surface or subsurface.So the manufacturing technology is critical to produce high-quality SiC single crystal slicing and high performance saw wire.In this paper,recent progress of manufacturing technology of SiC single crystal wire saw slicing and electroplated diamond wire saw is summarized.The problems in machining process are reviewed and analyzed.The research trend on SiC single crystal wire saw slicing technique is also presented.