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增强调制掺杂Si_(80)Ge_(20)基热电材料功率因子的研究 被引量:2

Study on Enhanced and Modulation-Doped Si_(80)Ge_(20) Thermal Material Power Factor
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摘要 采用成熟工艺制备了N型、P型调制掺杂型Si80Ge20基固溶体合金及等化学计量比的均匀掺杂型Si80Ge20基固溶体合金,重点研究了两类固溶体合金的热电性能。结果表明:温度为773 K时,N型系列、P型系列,调制掺杂型固溶体合金较均匀掺杂型的功率因子分别提高了13.6%和49.2%,热电优值ZT分别提高了7.9%和12.9%。 N-type, P-type modulation-doped Si80Ge20 solid solution alloy and equivalent stoichiometric ratio uniform-doped Si80Ge20 solid solution alloy were prepared by our mature technologies. We concentrated on the thermoelectric properties of both alloy materials. The results show that the power factors of N-type, P-type modulation-doped solid solution alloys are enhanced by 13.6% and 49.2% respectively, compared with that of uniform-doped Si80Ge20 solid solution alloy. And their ZT (thermoelectric figure of merit) are enhanced by 7.9% and 12.9%, respectively.
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2013年第12期2490-2493,共4页 Rare Metal Materials and Engineering
基金 国家自然科学基金资助项目(51171117) 广东省科技计划项目(2006B14001001) 深圳市科技计划项目(CXB200903090012A)
关键词 热电材料 Si80Ge20固溶体合金 功率因子 热电性能 调制掺杂 thermoelectric material Si80Ge20 solid solution alloy power factor thermoelectric properties modulation-doping
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参考文献8

  • 1Hicks L D, Drsselhaus M S et al. Physical Review Letters[J].,1993,47(24): 16 631.
  • 2Harman T C, Taylor P J, Walsh M P et al. Science[J]. 2002, 297(5590): 2229.
  • 3Ananth S Lyengar. Synthesis and Characterization of Micro/ Nano Materials for Thermoelectric Applications[D]. Ohio: Case Western Reserve University, 2010: 8.
  • 4Venkatasubramanian R,Edward Siivola, Thomas Colpitts et al. Nature[J], 2001, 413(6865): 597.
  • 5Mona Z, Giri J, Gaohua Zhu et al. Nano Lett[J]t 2011,11(6): 2225.
  • 6龚晓钟,吴振兴,彭雨辰,朱晓旋,张倩瑶,范媛,汤皎宁.热电材料SiGe合金的制备[J].材料热处理学报,2012,33(11):1-5. 被引量:9
  • 7Tian Shi(田荷)_ Physical Properties of the McUeria/s(材料物 理性能)[M]. Beijing: Beihang University Press, 2004: 268.
  • 8Wang Wenhua(王文华).The Preparation and Performance of Si80Ge20 Thermoelectric M^erzb^SiSOGeZO 热电材料的制 备与性能研究)[D]. Wuhan: Wuhan University of Technology, 2007:39.

二级参考文献10

  • 1蒋中伟,张维连,陈洪建,孙军生.SiGe合金材料热电转换效应的应用和研究进展[J].河北工业大学学报,2004,33(4):31-35. 被引量:3
  • 2高敏,D.M.Rowe.SiGe/GAP合金的高温退火特性[J].Journal of Semiconductors,1990,11(9):713-717. 被引量:2
  • 3姜洪义,王华文,任卫.SiGe热电材料的发展与展望[J].材料导报,2007,21(7):119-121. 被引量:12
  • 4Benjamin J S. Mechanical alloying [ J ]. Scientific American, 1976,234 ( 5 ) : 108 - 116.
  • 5Cook B A,Beaudry B J,Harringa W J,et al. The preparation of SiGe thermoelectric materials by mechanical mlloying[ J]. Institute of Electrical and Electronics Engineers, 1989,89 ( 3 ) : 693 - 700.
  • 6Lu L, Lai Mo. Modeling of the mechanical-alloying process [ J ]. Materials Processing Technology, 1995,52 ( 2 - 4 ) :539 - 546.
  • 7Watanabe R,Hashimoto H,Park Y H. Production of amorphous powder of titanium aluminide intermetallie compound by vibratory ball milling [ J]. Advances in Powder Metallurgy, 1991,6 : 119 - 130.
  • 8Park Y H, Hashimoto Watanabe R. Morphological evolution and amorphization of Ti/Cu and Ti/Al powder mixtures during vibratory baU milling [ J ]. Materials Science Forum, 1992 ,88 - 90:59 - 66.
  • 9Suryanarayana C. Nanocrystalline material [ J ]. International Materials Reviews, 1995,40 (2) :41 - 64.
  • 10苏宇欢.SiGe体单晶的研究进展[J].半导体情报,1999,36(6):27-30. 被引量:6

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