摘要
综述了反应磁控溅射技术的发展情况。分析了模拟反应磁控溅射的/Berg0经典模型;详述了反应磁控溅射过程中迟滞效应和打火现象的产生原理及过程;分析了消除迟滞效应和打火现象的各种方法并提出个人的观点;展望了反应磁控溅射技术的发展趋势。
The latest progress made in the thin film growth by reactive magnetron sputtering technology was reviewed in a thought provoking way. The discussions focused on three major topics： i）. Approximation and simulation of reactive magnetron sputtering with Berg classic model;ii）. The mechanisms responsible for the hysteresis effect and arc discharge; iii）. The negative impacts of the hysteresis effect and arc discharge on film deposition and the possible solutions. A novel technique was proposed to cope with the problems of hysteresis effect and arc discharge. The development trends of the re- active magnetron sputtering in film synthesis were also briefly discussed.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2013年第12期1229-1236,共8页
Chinese Journal of Vacuum Science and Technology
