利用ICP设备制备图形化蓝宝石基底的工艺控制

The Process Control of Patterned Sapphire Substrates Fabricated by Inductively-Coupled-Plasma Etcher

该文对利用感应耦合等离子体(ICP)刻蚀设备来制作图形化蓝宝石基底(PSS)的工艺控制进行了研究。在工艺制作过程中,选用了C轴(0001)取向的100mm蓝宝石平片作为实验样品,通过光刻工艺和ICP刻蚀工艺控制,制作出了具有圆锥状图形结构的图形化蓝宝石基底。借助扫描电子显微镜,对该图形化蓝宝石基底进行了测量和分析。测量结果显示,基底表面上的单粒圆锥状图形结构的底部直径为(3.45±0.25)μm,刻蚀高度/深度为(1.75±0.25)μm,整个图形化蓝宝石基底成品片的均匀性控制在3%以内。

The process control of patterned sapphire substrates fabricated by inductively-coupled-plasma（ICP） etcher is researched in this paper.In fabrication,the （Φ）100 mm flat sapphire wafers with C-axis （0001） orientation are selected as experimental samples,and the patterned sapphire substrates with conical patter shape are fabricated by photolithographic etching technique and ICP etching technique.Finally,the fabricated substrates are measured and analyzed by the scanning electron microscope.The measured and analyzed results show that the diameter of single conical pattern on the substrate surface is （Φ）（3.45±0.25） μm,the etching height/depth is （1.75±0.25） μm,and the uniformity of the whole substrate is controlled within 3 ％.