期刊文献+

基于Savitzky-Golay滤波器的MOSFET阈值电压提取技术 被引量:2

A Technique for Extracting the Threshold Voltage of MOSFET Based on Savitzky-Golay Filter
下载PDF
导出
摘要 MOS(Matel-Oxide-Semiconductor)器件阈值电压提取过程中的一些求导运算放大了测量数据中所包含的涨落因素(噪声和测量错误),使阈值电压提取过程变得不稳定.本文采用Savitzky-Golay低通滤波算法,求导运算和滤波过程同时进行,有效地抑制了测量数据中的涨落.再结合目标曲线峰值附近局域匹配系数判据,阈值电压提取过程就可以稳定且自动地完成,这为MOSFET(MOS Field-Effect Transistor)特性分析及集成电路设计工作带来很大方便. Originally from the noise and errors in measurement ,the fluctuations make the extraction of MOSFET’s threshold voltage unstable ,which will become worse in the case of the derivation operation .We proposed that the Savitzky-Golay filtering al-gorithm could be introduced into the derivation process in order to alleviate the influence of fluctuations effectively .A criterion for assessing the goodness of filtering was presented ,and then the extraction of threshold voltage of MOSFET could be achieved stably and automatically ,which will be in favor of the characterizing MOS devices and designing integrated circuits .
出处 《电子学报》 EI CAS CSCD 北大核心 2013年第11期2242-2246,共5页 Acta Electronica Sinica
基金 湖南省科技计划项目(No.2012GK3151)
关键词 金属氧化物半导体场效应晶体管 阈值电压 测量涨落 Savitzky-Golay滤波器 mos field-effect transistor (MOSFET) threshold voltage measurement fluctuations Savitzky-Golay filter
  • 相关文献

参考文献12

  • 1陈建军,陈书明,梁斌,刘征,刘必慰,秦军瑞.NBTI效应导致SET脉冲在产生与传播过程中的展宽[J].电子学报,2011,39(5):996-1001. 被引量:4
  • 2代月花,高珊,柯导明,陈军宁.基于二维电势分布的一种新型复合多晶硅栅LDMOS阈值电压模型[J].电子学报,2007,35(5):844-848. 被引量:3
  • 3A Ortiz-Conde,Sanchez,F J Garcia,Liou J J. A review of recent MOSFET threshold voltage extraction methods[J].Microelectronics Reliability,2002.583-596.
  • 4Wong H S,White M H,Krutsick T J. Modeling of transconductance degradation and extraction of threshold volt-age in thin oxide MOSFETs[J].Solid-State Electronics,1987,(09):953-958.
  • 5N艾罗拉;张兴;李映雪.用于VLSI的小尺寸器件模型[M]北京:科学出版社,1999578-589.
  • 6Young Choi Woo,Woo Dong-Soo,Yong Choi Byung. Stable extraction of threshold voltage using trans-conductance change method for CMOS modeling,simulation and characteri-zation[J].Japanese Journal of Applied Physics,2004,(4B):1759-1762.
  • 7陈龙超,范文慧.高灵敏度低噪声太赫兹电光探测器研究[J].电子学报,2012,40(9):1705-1709. 被引量:4
  • 8Taur,Yuan,Ning,Tak H. Fundamentals of Modern VLSI De-vices[M].Cambridge:Cambridge University Press,1998.117-135.
  • 9Savitzky A,Golay J. Smoothing and differentiation of data by simplified least squares procedures[J].Analytical Chemistry,1964,(08):1627-1639.
  • 10Steinier J,Termonia Y,Deltour J. Comments on smoothing and differentiation of data by simplified least squares proce-dure[J].Analytical Chemistry,1972,(11):1906-1909.

二级参考文献37

  • 1郝跃,韩晓亮,刘红侠.超深亚微米P^+栅PMOSFET中NBTI效应及其机理研究[J].电子学报,2003,31(z1):2063-2065. 被引量:4
  • 2姚建铨,路洋,张百钢,王鹏.THz辐射的研究和应用新进展[J].光电子.激光,2005,16(4):503-510. 被引量:70
  • 3张振伟,崔伟丽,张岩,张存林.太赫兹成像技术的实验研究[J].红外与毫米波学报,2006,25(3):217-220. 被引量:36
  • 4M A Alam, H Kufluoglu, D. Varghese, S. Mahapatra, A com- prehensive model for PMOS NBTI degradation: Recent progress E Jl. Microelectronics Reliability, 2007,47 ( 6 ) : 853 - 862.
  • 5P Shivakumar,M Kisfler,S Keckler,D. Burger,L Alvisi. Modeling the effect of technology trends on the soft error rate of combinational logic [ A ]. Proc DSTN [ C ]. Washington, DC: IEEE Inc, 2002. 389 - 398.
  • 6Liu Biwei, Chen Shuming, Liang Bin, Liu Zheng, Zhao Zhenyu. The effect of re-convergence on SER estimation in combinational circuits [J].IEEE Trans Nucl Sci, 2(109,56 (6) : 3122 - 3129.
  • 7J Zhou, D M Fleetwood, J A Felix, E P Gusev, C. D' Emic. Bias-temperature instabilities and radiation effects in MOS de- vices[J].I IEEE Trans Nucl Sci, 2005,52(6) : 2231.
  • 8Silvestri M, Gerardin S, Paccagnella A, et al. Degradation induced by X-ray irradiation and gate hot cartier stresses in 130- nm NMOSFETs with enclosed layout[J].IEEE Trans Nucl Sci, 2008,55(6) :3216.
  • 9Silvestri M, Gerardin S, Paccagnella A, et al. Gate hot carder stress on irradiated 130 - nm NMOSFETs~ J]. ~F.E Trans Nucl Sci,2008,55(4) : 1960.
  • 10Andrea Cester, Salvatore Cimino, Alessandro Paccagnella, Gerard Ghibaudo, Gabriella Ghidini, Jeffrey Wyss. Acceleraled wear-out of ultra-thin gate oxides after irradiation[J]. IEEE Trans Nucl Sci,2003,50(3) :729.

共引文献8

同被引文献28

引证文献2

二级引证文献27

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部