封装过程中装片后烘烤机理及改善方法探讨

The discussion for baking after die attach of packaging process mechanism and improving method

本文探讨并验证了IC封装工序装片后烘烤过程的机理,结合烘烤后失重曲线的分析,重新设计了烘烤升温曲线(烘烤固化)、氮气保护(防止铜材氧化)、抽风(排出挥发物)等工艺参数。验证结果表明,重新设计后的烘烤过程,克服了装片胶挥发污染、铜材氧化这两个对产品可靠性影响最关键的不利因素,降低了装片烘烤工艺对产品可靠性的影响。

In this thesis, the mechanism of baking process which was after die attach of IC packaging process are discussed and validated. Combined with the analysis of weightlessness curve, the technological parameters of heating curve （ baking cure ）, N2 protection （ to avoid copper being oxidized ）, ventilation （ discharging volatiles ） are redesigned. The results show that the redesigned baking process overcomes the key unfavorable factor of influencing the product reliability, which is about the die attach epoxy volatile pollution and copper oxidization, and reduces the impacts of baking after die attach technology on product reliability.