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PERL结构单晶硅太阳电池的研究 被引量：2

STUDY OF PERL MONOCRYSTALLINE SILICON SOLAR CELLS
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摘要 通过采用SiO2/SiNx叠层膜作为背钝化介质层,PECVD沉积掺硼氧化硅结合激光掺杂形成局部背场,依次经过背面溅射铝、低温烧结形成背面电极,电镀形成正面电极制备PERL结构单晶硅太阳电池。对比不同清洗条件对表面钝化的影响,背面电极不同烧结条件对单晶PERL电池电性能的影响,优化后单晶电池转换效率可达20.36%。 The monocrystalline silicon solar cells with passivated emitter and rear locally diffused （PERL） structure were studied. The PERL structure solar cells consist of SiOJSiNx rear passivation stacks, local back surface field formed by laser doping boron doped SiO2, rear electrode formed by low temperature annealed sputtering aluminum, and electrodeplated front electrode. The influence of different cleaning conditions on the surface passivation and the effect of rear electrode annealing conditions on the electrical performance were investigated, respectively. After process optimization, efficiency of monocrystalline silicon PERL cells up to 20.36% was demonstrated.
作者 陈丽萍 王永谦 钱洪强 陆红艳 陈如龙 杨健 李果华 朱景兵 施正荣
机构地区 无锡尚德太阳能电力有限公司 江南大学理学院 江苏省(尚德)光伏技术研究院
出处 《太阳能学报》 EI CAS CSCD 北大核心 2013年第12期2170-2174,共5页 Acta Energiae Solaris Sinica
基金 国家高技术研究发展(863)计划(2012AA050302)
关键词 单晶硅太阳电池 背面钝化 激光掺杂 钝化发射极背面局域扩散(PERL) monocrystalline silicon solar cell rear passivation laser doping passivated emitter and rear locallydiffusion （PERL）
分类号 TM914.4 [电气工程—电力电子与电力传动]
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参考文献7

  • 1LeeD Y, Lee H H, Ahn J Y, et al. A new back surface passivation stack for thin crystalline silicon solar cells with screen-printed back contacts [ J ]. Solar Energy Materials and Solar Cells, 2011, 95 ( 1 ) : 26- 29.
  • 2Zhao J, Wang A, Ahermatt P P, et al. 24% efficient PERL silicon solar cell: Recent improvement in high efficiency silicon cell research[J]. Solar Energy Materials and Solar Cells, 1996, 41/42(1) : 87--99.
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同被引文献32

  • 1RAHMAN M Z. Advances in surface passivation and emitter optimization techniques of c-Si solar cells[J]. Renew Sust Energy Rev, 2014, 30: 734-742.
  • 2CUEVAS A, MACDONALD D. Measuring and interpreting the lifetime of silicon wafers[J]. Sol Energy, 2004, 76(1): 255-262.
  • 3COTTER J E, GUO J H, COUSINS P J, et al. P-type versus n-type silicon wafers: prospects for high-efficiency commercial silicon solar cells[J]. Electron Dev, 2006, 53(8): 1893-1901.
  • 4BOTHE K, SINTON R, SCHMIDT J. Fundamental boron-oxygen-related cartier lifetime limit in mono-and multicrystalline silicon [J]. Prog Photovolt: Res Appl, 2005, 13: 287-296.
  • 5MACDONALDA D, GEERLIGS L. Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crstalline silicon [J]. Appl Phys Lett, 2004, 85:4061-4063.
  • 6WENHAM S R GREEN M A, WATT M E, et al. Applied photovoltaics [M]. London: Routledge, 2012: 58-63.
  • 7GREEN M A. "High-efficiency silicon solar cell concepts" in solar cells (second edition): materials, manufacture and operation [M]. Amsterdam: Holland Elsevier Science. 2013: 87-113.
  • 8LUQUE A, HEGEDUS S. "'The physics of solar cell" in handbook of photovoltaic science and engineering [M]. New York: John Wiley & Sons Ltd, 2005:61-112.
  • 9GREEN M A. The path to 25% silicon solar cell efficiency: history of silicon cell evolution [J]. Prog Photovolt: Res Appl, 2009, 17(3): 183-189.
  • 10MOORS M, BAERT K, CAREMANS T, et al. Industrial PERL-type solar cells exceeding 19% with screen-printed contacts and Itomogeneous emitter [J]. Sol Energy Mater Sol Cells, 2012, 106: 84-88.

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太阳能学报
2013年 第12期

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