基于高雾度BZO前电极的高效率非晶硅/纳米硅叠层电池的制备

PREPARATION OF HIGH EFFICIENCY AMORPHOUS /NANO-CRYSTALLINE SILICON TANDEM CELLS BASE ON BZO FILM WITH HIGH HAZE

利用自行设计开发的LPCVD设备和BZO生长工艺制备BZO导电玻璃,并用自行研发的工艺在其上制备非晶硅/纳米硅叠层电池,同时用相近工艺在商用FTO导电玻璃上制备电池,对两者进行比较。实验发现:在工业化生产可接受的条件下,自行开发BZO前电极电池的QE总电流密度可比高质量商用FTO前电极电池高约1mA/cm2;通过自行研发的工艺技术,成功解决BZO前电极+非晶硅/纳米硅叠层+银背电极结构电池的开路电压和填充因子过低的问题,所制备的BZO前电极电池初始效率最高可达12.2%。

Applying the self-designed and made LPCVD equipment and self-developed growth process of boron- doped zinc oxide （BZO） TCO glasses with strong light trapping effect, amorphous/nano-crystalline silicon tandem cells had been grown using optimized processes. For comparison, similar cells have also been grown on commercial FTO coated glasses. It has been found that the strong light trapping effect of BZO could introduce considerable current gain to the cells, especially to the bottom cells. QE measurement results show that J~,： of bottom cell based on BZO could be more than 1 mA/cmz larger than that based on FrO. Furthermore, by applying new back contact technology, metal back electrode has been successfully integrated with the front electrode formed by high-haze BZO film, and amorphous/nano-crystalline silicon tandem cells with efficiency of 12.2% （0. 79m2） has been achieved.