高密实率Cu(In,Ga)Se_2陶瓷靶材制备和性能研究

PREPARATION AND PERFORMANCES OF HIGH DENSITY Cu(In,Ga)Se_3 CERAMIC TARGETS

采用热压烧结Cu2Se、In2Se3、Ga2Se3混合粉末的方法制备CIGS四元陶瓷靶材。考察烧结温度、烧结压力对靶材的相组成、形貌、成分的影响。实验结果表明,在烧结温度较低时,首先获得CuInSe2三元黄铜矿相结构,随着烧结温度的升高,Ga元素不断向CIS中扩散,并获得均质的CIGS四元靶材。通过增大烧结压力,可提高靶材密度。烧结时间的延长,对靶材的密实率无明显影响。在烧结温度900℃,烧结压力45MPa的条件下,获得密实率超过96%的靶材。

Hot pressed sintering is used to fabricate CIGS targets with Cu2Se, In2Se3, and GaiSe3 as raw powders. The influences of sintering temperature and sintering pressure on the phase structures, section morphology and composition of the target were studied. The results showed that chalcopyrite CulnSe2 is acquired at lower sintering temperature. With temperature increasing, Ga atom diffuses in CIS gradually and CIS converts into a homogeneous quaternary CIGS structure. Density of CIGS target enhances obviously by increasing the sintering pressure while the extension of sintering duration has no influence on the density. A CIGS target with a relative density more than 96% can be obtained at sintering temperature of 900℃ and sintering pressure of 45MPa.