4位毫米波MEMS移相器

A 4bit Millimeter-wave MEMS Phase Shifter

报道了一款开关线型Ka波段MEMS移相器,采用了16只悬臂梁结构MEMS开关,实现了4位相移。采用阶梯阻抗共面波导(CPW)传输线设计,实现了一种新型而紧凑的移相器阻抗匹配的结构。采用RF MEMS低温表面牺牲层工艺,在高阻硅片上实现了单片4位MEMS移相器样品,在35GHz频点,平均插入损耗-5.8dB,16态相移误差≤8.5°,芯片尺寸5.3mm×2.9mm。分析MEMS移相器插损的构成,提出了降低MEMS移相器插损的工艺途径,预期Ka波段4位MEMS移相器的平均插损可降为-2.6dB,满足低成本毫米波MEMS相控阵系统应用需求。

A 4 bit switch-line millimeter-wave composed of 16 cantilever series MEMS switches. MEMS phase shifter is The stepped impedance designed, which is coplanar waveguide （CPW） lines serve to mitigate the mismatch. The phase shifter is fabricated on a 400 μm thick- ness high-resistivity silicon wafer using low temperature metal-dielectric surface micromachining process, and the chip size is 5.3 mm × 2.9 mm. Experimental data show an average insertion loss of -5.8 dB at 35 GHz, a maximum phase error of 8.5°. The component parts of the insertion loss are analyzed, and the process approach to reduce the loss is presented. It is expected that the average insertion loss of this 4 bit Ka-band MEMS phase shifter will be reduced to -2.6 dB, and it will meet the application requirements of low-cost millimeter-wave MEMS phased array sys-tems.