Al、Sn共掺杂ZnO薄膜(ZATO)的制备及性能研究

Preparation and property of Al-Sn co-doped ZnO(ZATO) thin film by magnetron sputtering

文章采用射频磁控溅射技术,室温下在玻璃衬底上制备了Al、Sn共掺杂ZnO导电薄膜(ZATO),利用X射线衍射仪(XRD)、原子力显微镜(AFM)、紫外-可见光分光光度计、四探针测试仪表征了薄膜的结构与光电性能。实验结果表明,ZATO薄膜具有(002)择优取向,当溅射功率为120 W时,ZATO薄膜在可见光范围的平均透过率大于88%,电阻率为7.46×10-3Ω·cm。

Abstract： A1-Sn co-doped ZnO （ZATO） conductive thin films were deposited on glass substrates in room temperature by RF magnetron sputtering. The structure and photoelectric property of ZATO films were characterized by X-ray diffraction （XRD）, atomic force microscope （AFM）, ultraviolet spectrophotometer and four-point probe meter. The results show that ZATO films grow along （002） crystal plane. By sputtering at 120 W, the average optical transmittance of ZATO film is higher than 88% and its resistivity is 7.46×10-3Ω·cm.