摘要
高量子效率、高UV/VIS抑制比、宽的光谱响应范围、快的响应速度是AlGaN紫外探测器设计追求的主要目标。为了获得适宜于紫外焦平面阵列的探测器结构，结合MOCVD外延材料生长的特点，采用模拟计算与实验相结合的方法，设计了背照式高量子效率AlGaN日盲探测器。详细介绍了背照式AlxGa1-xN-pin紫外探测器结构参数设计的依据和设计过程，并给出了设计结果，通过工艺实验，对设计结果进行了优化。应用设计结果进行了器件试制，经测试试制器件，其峰值响应波长为270 nm，光谱响应范围为250～282 nm，峰值量子效率达到了57%（0 V），实验表明取得了比较理想的设计结果。
High quantum efficiency, high UV/VIS rejection ratio, fast response and wide spectral response are the main objects for the design of AlGaN photodetectors. To obtain suitable detector structure for UV focal plane array, combining with the characteristics of epitaxial materials grown by MOCVD, a design of back-illuminated solar-blind AlGaN photodetectors with high quantum efficiency was demonstrated based on simulations and experiments. The design basis and process of the AlxGa1-xN-pin photodetectors were introduced in detail, and then the design was optimized by experiments. Moreover, the photodiodes were fabricated according to the design, and the performance of device was also presented, exhibiting high peak unbiased EQE of 57% at 270 nm, responding to the spectral range between 250 nm and 282 nm. It is indicated that an optimal design is achieved.
出处
《红外与激光工程》
EI
CSCD
北大核心
2013年第12期3358-3362,共5页
Infrared and Laser Engineering
