In_xGa_(1-x)As高性能全固态数字化微光器件

High performance solid-state and digitalized In_xGa_(1-x) As low-light night vision devices

作为全固态微光器件,In x Ga1-x As器件通过调节材料组分x值,其响应波段覆盖夜天光辐射的主要波段,对夜天光的能量利用率高。加之材料量子效率高,器件性能好,可望显著提高夜视系统作战距离;另外,采用半导体常规工艺制作,可完成大面阵、长线列器件制备,无需封装在(超)高真空系统,制备简单;采用CMOS读出电路进行信号数据的读取、传输与放大,有利于进行数据的处理和优化改善。由于具备的以上技术优势,In x Ga1-x As器件成为一种新型的高性能全固态数字化微光器件。In x Ga1-x As器件与传统的微光器件在光电转换原理以及器件制备方面存在不同,决定了两者在性能上存在的差异。文中对此进行了对比分析,分析结果体现了In x Ga1-x As全固态数字化微光器件的技术优势和特点,以及In x Ga1-x As全固态数字化微光器件存在的重要应用和发展需求。

As full solid-state low-light night vision devices, InxGa1-xAs could adjust the composition x to vary the response wavelength, which can cover the main wavelength of the night sky radiation. In addition to this, the quantum efficiency of the InxGa1-xAs material is high, and the device dark current is low, so performance of the InxGa1-xAs devices is high for the night vision system, as consequence the longer detecting distance for the system. Besides, the InxGa1-xAs arrays are made from the conventional semiconductor process without sealed in the ultrahigh vacuum. CMOS ROIC is adopted to read, transport and amplify the signal, then the signal datum is easy to handle and improve for the InxGa1-xAs low-light devices comparing the vacuum devices. The above advantages made the InxGa1-xAs devices a novel low-light device. There are lots of differences concerning the working mechanism, fabrication method, as well as the performance between InxGa1-xAs devices and vacuum one. Based on the comparison results the technique feature and the important application requirement for InxGa1-xAs solid-state low-light night vision devices were analyzed.