摘要
随着第三代半导体GaN器件技术的不断发展，GaN高电子迁移率晶体管（HEMT）功率器件在电子系统中逐步得到了广泛应用。GaN功率器件具有工作效率高、功率密度大和击穿场强高的特点，非常适合用于大功率、连续波功率放大器设计。基于GaN功率器件大信号模型，采用MicrowaveOffice2009微波设计软件对功率放大器进行仿真优化，设计并研制出了c波段高效率30W连续波功率放大器。该放大器功率器件采用了CREE公司C波段GaNHEMT功率器件，实现放大器尺寸为190mmx50mm×15mm，端口阻抗为50Q。放大器在5650～5950MHz频带内、28V工作条件下，连续波输出功率大于30w，增益大于45dB，效率大于30％。
With the development of the third generation semiconductor GaN devices technology, GaN high electron mobility transistor （HEMT） power devices are more and more widely applied in many electronic systems. The GaN power devices can be competitive candidates in continuous wave （CW） power amplification since they have the advantages of large output power density, high efficiency and high breakdown voltage. Based on the large signal model of GaN power devices and the power amplifier was simulated and optimized using microwave design software （Microwave Office 2009）. The C-band high efficient 30 W microwave CW power amplifier was designed and manufactured. The amplifier in C-band was successfully developed by GaN HEMT power devices of CREE. Dimensions of the power amplifier are 190 mm×50 mm×15 mm. The input and output impedance of the power amplifier is 50 Ω. The amplifier can deliver continuous wave output power more than 30 W with 45 dB power gain and 30% efficiency under the condition of 28 V operation, in the range of 5 650-5 950 MHz.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第1期42-45,共4页
Semiconductor Technology
