紫外脉冲激光淀积法制备Pb(Ta_(0.05)Zr_(0.48)Ti_(0.47))O_3薄膜的铁电性质

Ferroelectric Properties of Pb(Ta_(0.05)Zr_(0.48)Ti_(0.47))O_3 Films Prepared by Pulsed Laser Deposition

用紫外脉冲激光淀积方法在 Pt/ Ti O2 / Si O2 / Si( 0 0 1)衬底上制备了 L a1-x Srx Co O3/Pb( Ta0 .0 5Zr0 .4 8Ti0 .4 7) O3( PTZT) / L a1-x Srx Co O3异质结构薄膜。发现底电极 L a0 .2 5Sr0 .75Co O3可以诱导 PTZT薄膜沿 ( 0 0 1)方向取向生长。在 50 0 k Hz和 5V的工作电压下铁电电容器 L a0 .2 5Sr0 .75Co O3/PTZT/ L a0 .2 5Sr0 .75Co O3经过 5× 10 10次反转之后 ,仍保持其初始电极化的 96%。此异质结构横截面的扫描电镜照片表明界面上没有明显的因化学反应导致的第二相存在。

The heterostructures of La 1-x Sr\-xCoO\-3/Pb(Ta 0.05 Zr 0.48 Ti 0.47 )O\-3(PTZT)/La 1-x Sr\-xCoO\-3 have been deposited on Pt/TiO\-2/SiO\-2/Si(001) substrates by pulsed laser deposition.It was observed that PTZT films were mainly oriented along (001)\|direction.The ferroelectric capacitor La 1-x Sr\-xCoO\-3/Pb(Ta 0.05 Zr 0.48 Ti 0.47 )O\-3(PTZT)/La 1-x Sr\-xCoO\-3 retained its polarization as about 96% of its initial value after 5×10 10 switching cycles at an applied voltage 5 V and a frequency 500kHz.SEM cross\|sectional morphology of the heterostructures and RBS backscattering spectrum showed that no obvious interdiffusion exist on the interface.