激光等离子体诱发SiCl_4解离沉积硅膜的研究

Studies on Deposition of Silicon Film by Laser-Plasma-InducedDissociation of SiCl4

硅是重要半导体材料之一,其薄膜广泛应用于集成电路和太阳能电池。但用普通方法制备纯硅需要很高温度,而利用激光便可在低温下进行。因此激光诱导化学气相沉积技术是改革集成电路工艺和制备太阳能电池的一种很有希望的方法。本文用SiCl_4代替通常使用的SiH_4,用TEA CO_2激光诱导SiCl_4解离气相沉积硅膜。

Silicon film was first deposited on a quartz substrate by laser-plasma-induced dissociation of SiCl4. The characteristics of the film obtained is compared with that from laser deposition of SiH4 in some references.