电流型GaN辐射探测器研制

A Current Mode GaN Radiation Detector

采用大面积半绝缘型GaN(semi-insulting GaN,SI-GaN)晶体制备了电流型GaN辐射探测器,研究了探测器伏安(I-V)特性、γ射线响应特性、灵敏度、电荷收集效率、脉冲响应等物理性能。结果表明,晶体表面与金属形成了良好的欧姆接触,探测器在600V偏压下暗电流低于400pA,电荷收集效率高于40%,探测器脉冲响应时间在ns量级。

A current mode GaN detector was developed by using large area semt-msulung GaN crystal as its sensitive medium. The characteristics of the detector were tested such as the I- V curve, the responsibility and sensitivity to y-rays, the charge collection efficiency, and the time response to pulsed X-rays. The test results showed that a low resistance ohmic contact formed between the crystal and the metal electrode. The dark current was lower than 400 pA at voltage of 600 V, the charge collection efficiency was greater than 40 ~, and the time response to pulsed X-rays was at nanosecond order.