摘要
为提高硅片抛光质量与效率,利用均相沉淀法制备CeO2/SiO2复合磨粒,配制绿色环保水基型抛光液对硅片进行化学机械抛光,研究pH值、抛光时间、抛光速度、抛光压力等抛光工艺参数对硅片抛光性能的影响。结果表明:随抛光液pH值增加,材料去除率相应增大;材料去除率在一定时间范围内随抛光时间增加而下降;材料去除量随抛光速度、抛光压力的增加均先增大后减小。推测CeO2/SiO2复合磨粒抛光机制为由于水合作用,在硅片表面形成一层易于磨削的软质层。
In order to improve the quality and efficiency of wafer chemical mechanical polishing（CMP） ,the green water-based slurry was prepared by CeO2/SiO2 composite abrasives with homogeneous precipitation, and the polishing per-formance of CeO/SiO2 composite abrasive slurry on silicon wafer was studied by changing pH value of polishing slurry, polishing time, polishing speed and polishing pressure. The results show that the material removal rate is increased with the increasing of pH value of polishing slurry, and decreased with time within a certain polishing time. With the increasing of polishing rate and polishing pressure, the amount of material removal is increased first and then decreased. The polishing mechanism of CeO/SiO2 composite abrasive slurry is that the soft layer easy for grinding is formed on wafer surface by CeO2/SiO2 composite abrasives due to the hydration.
出处
《润滑与密封》
CAS
CSCD
北大核心
2014年第1期59-63,共5页
Lubrication Engineering
基金
国家自然科学基金项目(51005102)
中央高校基本科研业务费专项基金项目(JUSRP10909
JUDCF13028)
清华大学摩擦学国家重点实验室开放基金项目(SKLTKE10B04)
教育部留学回国人员科研启动基金项目(20111139)
江苏省普通高校研究生科研创新计划项目(CXZZ13_0738)
关键词
化学机械抛光
复合磨粒
抛光工艺参数
硅片
抛光机制
chemical mechanical polishing
composite abrasives
polishing process parameters
silicon wafer
polishing mechanism
